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NUMERICAL SIMULATION OF THE INFLUENCE OF RADIATION ON THE MOS DEVICES PARAMETERS

Abstract

A model describing the space-time evolution of the charge which arises in the dielectric struc-ture of metal-insulator-semiconductor under ionizing radiation of X-ray and gamma-rays is consi-dered. The system of equations is solved by the numerical method. For realization of the difference problem an iterative algorithm is developed. The results of numerical modeling are presented.

For citations:


Zayats G.M., Komarov F.F., Komarov A.F. NUMERICAL SIMULATION OF THE INFLUENCE OF RADIATION ON THE MOS DEVICES PARAMETERS. Informatics. 2014;(3):52-61. (In Russ.)

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ISSN 1816-0301 (Print)
ISSN 2617-6963 (Online)