1. Whelan, S. Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions / S. Whelan [et al.] // Materials Science in Semiconductor Processing. 2000. No. 3. P. 285290.
2. Vandervorst, W. Errors in near-surface and interfacial profiling of boron and arsenic / W. Vandervorst [et al.] // Applied Surface Science. 2004. Vol. 231232. P. 618631.
3. Buyuklimanli, T.H. Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling / T.H. Buyuklimanli, J.W. Marino, S.W. Novak // Applied Surface Science. 2004. Vol. 231232. P. 636639.
4. Girginoudi, D. Studies of ultra shallow p junctions formed by low-energy As-implantation / D. Girginoudi [et al.] // Materials Science and Engineering B 114-115. 2004. P. 381385.
5. Solmi, S. Transient enhanced diffusion of arsenic in silicon / S. Solmi [et al.] // Journal of Appleid Physics. 2003. Vol. 94, No. 8. P. 49504955.
6. La Via, F. Precipitation of arsenic diffused into silicon from a TiSi2 source / F. La Via [et al.] // Journal of Appleid Physics. 1991. Vol. 69, No. 2. P. 726731.
7. Lamrani, Y. Direct evidence of the recombination of silicon interstitial atoms at the silicon surface / Y. Lamrani [et al.] // Nuclear Instrum. and Meth. in Phys. Res. 2004. Vol. B 216. P. 281285.
8. Fedotov, K. A set of equations of stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals / K. Fedotov, O.I. Velichko, V.A. Dobrushkin // Journal of Alloys and Compounds. 2004. Vol. 382, Issue 12. P. 283287.
9. Velichko, O.I. Simulation of arsenic diffusion during rapid thermal annealing of silicon layers doped with low-energy high-dose ion implantation / O.I. Velichko [et al.] // Сб. материалов 6-й Междунар. конф. ВИТТ2005. - Минск, 2005. С. 197199.
10. Komarov, F.F. Modeling of diffusion of As implanted in Si in the near-surface region / F.F. Komarov [et al.] // Proceedings of the IV International Conference «New Electrical and Electronic Technologies and their Industrial Implementation». - Zakopane, Poland, 2005. P. 6870.
11. Velichko, O.I. Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain / O.I. Velichko [et al.] // Journal of Computational Physics. 2002. Vol. 178. P. 196205.
12. Solmi, S. High concentration diffusivity and clustering of arsenic and phosphorus in silicon / S. Solmi, D. Nobili // Journal of Appleid Physics. 1998. Vol. 83. No. 5. P. 24842490.
13. Самарский, А.А. Теория разностных схем / А.А. Самарский. М.: Наука, 1977. 656 с.
14. Самарский, А.А. Методы решения сеточных уравнений / А.А. Самарский, Е.С. Николаев. М.: Наука, 1978. 592 c.
15. Likhoded, N.A. Processor Arrays for Solving Nonstationary Systems of Equations of Mathematical Physics / N.A. Likhoded, A.A. Tiunchik, V.A. Tsurko // Engineering Simulation. 1995. Vol. 13. P. 259270.
Послать статью по эл. почте 