1. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs / A. Asenov [et al.] // IEEE transactions on electron devices. - 2003. - Vol. 50, no. 9. - P. 1837-1852.
2. Koenraad, P. M. Single dopants in semiconductors / P. M. Koenraad, M. E. Flatte // Nature materials. - 2011. - Vol. 10, no. 2. - P. 91-100.
3. Kane, B. E. A silicon-based nuclear spin quantum computer / B. E. Kane // Nature (London). - 1998. - Vol. 393, no. 6681. - P. 133-137.
4. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures / R. Vrijen [et al.] // Physical Review A. - 2000. - Vol. 62, no. 1. - P. 012306-1-012306-10.
5. Charge-based quantum computing using single donors in semiconductors / L.C.L. Hollenberg [et al.] // Physical Review B. - 2004. - Vol. 69, no. 11. - P. 113301-1-113301-5.
6. Gate-induced ionization of single dopant atoms / G. D. J. Smit [et al.] // Physical Review B. - 2003. - Vol. 68, no.19. - P. 193302-1-193302-5.
7. Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces / L. M. Kettle [et al.] // Physical Review B. - 2003. - Vol. 68, no. 7. - P. 075317-1-075317-7.
8. MacMillen, D. B. Variational solutions of simple quantum systems subject to variable boundary conditions. II. Shallow donor imputities near semiconductor interfaces: Si, Ge / D. B. MacMillen, U. Landman // J. Chem. Phys. - 1984. - Vol. 80, no. 2. - P. 1691-1702.
9. Calderon, M. J. Quantum control of donor electrons at the Si-SiO2 interface / M. J. Calderon, B. Koiller, S. Das Sarma // Physical Review Lett. - 2006. - Vol. 96, no. 9. - P. 096802-1-096802-5.
10. Calderon, M. J. External field control of donor electron exchange at the Si/SiO2 interface / M. J. Calderon, B. Koiller, S. Das Sarma // Physical Review B. - 2007. - Vol. 75, no. 12. - P. 125311-1-125311-11.
11. Effect of a metallic gate on the energy levels of a shallow donor / A. F. Slachmuylders [et al.] // Appl. Phys. Lett. - 2008. - Vol. 92, no. 8. - P. 083104-1-083104-3.
12. Shallow donor states near a semiconductor-insulator-metal interface / Y. L. Hao [et al.] // Physical Review B. - 2009. - Vol. 80, no. 3. - P. 035329-1-035329-10.
13. Nikolyuk, V. A. The energy structure of quantum dots induced in quantum wells by a nonuniform electric field / V. A. Nikolyuk, I. V. Ignatiev // Semiconductors. - 2007. - Vol. 41, no. 12. - P. 1422-1429.
14. Samarskii, A. A. Teoriya raznostnykh skhem / A. A. Samarskii. - M.: Nauka, 1989. - 616 s.
15. Souza, G. V. B. Finite-difference calculation of donor energy levels in a spherical quantum dot subject to a magnetic field / G. V. B. Souza, A. Bruno-Alfonso // Physica E. - 2015. - Vol. 66. - P. 128-132.
16. Modeling a nanowire superlattice using the finite difference method in cylindrical polar coordinates / C. Galeriu [et al.] // Comp. Phys. Commun. - 2004. - Vol. 157, no. 2. - P. 147-159.
17. Bingel, W. A. A physical interpretation of the cusp conditions for molecular wave functions / W. A. Bingel // Theoretica Chimica Acta. - 1967. - Vol. 8, no. 1. - P. 54-61.
18. Smait, V. Elektrostatika i elektrodinamika / V. Smait. - M.: Izd-vo inostr. lit., 1954. - 604 s.
19. Levchuk, E. A. On controlling the electronic states of shallow donors using a finite-size metal gate / E. A. Levchuk, L.F. Makarenko // Semiconductors. - 2016. - Vol. 50, no. 1. - P. 89-96.
20. S'yarle, F. Metod konechnykh elementov dlya ellipticheskikh zadach / F. S'yarle. - M.: Mir, 1980. - 510 s.
21. Levchuk, E. A. Vliyanie magnitnogo polya na lokalizatsiyu volnovoi funktsii elektrona v sisteme nanozatvor - donor / E. A. Levchuk, L. F. Makarenko // Izvestiya NAN Belarusi. Ser. fiz.-mat. nauk. - 2016. - № 2. - P. 68-75.