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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">inform</journal-id><journal-title-group><journal-title xml:lang="ru">Информатика</journal-title><trans-title-group xml:lang="en"><trans-title>Informatics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1816-0301</issn><issn pub-type="epub">2617-6963</issn><publisher><publisher-name>UIIP NASB</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">inform-87</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МАТЕМАТИЧЕСКОЕ МОДЕЛИРОВАНИЕ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATHEMATICAL MODELING</subject></subj-group></article-categories><title-group><article-title>AB INITIO МОДЕЛИРОВАНИЕ ЭЛЕКТРОННЫХ СВОЙСТВ ДВУХМЕРНОГО МОЛИБДЕНИТА</article-title><trans-title-group xml:lang="en"><trans-title>AB INITIO MODELLING OF ELECTRONIC PROPERTIES OF TWO-DIMENSIONAL MOLYBDENUM DISULFIDE</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Козлова</surname><given-names>О. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kozlova</surname><given-names>O. A.</given-names></name></name-alternatives><email xlink:type="simple">nvv@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Нелаев</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Nelayev</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">nvv@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2013</year></pub-date><pub-date pub-type="epub"><day>01</day><month>10</month><year>2016</year></pub-date><volume>0</volume><issue>3</issue><fpage>58</fpage><lpage>64</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Козлова О.А., Нелаев В.В., 2016</copyright-statement><copyright-year>2016</copyright-year><copyright-holder xml:lang="ru">Козлова О.А., Нелаев В.В.</copyright-holder><copyright-holder xml:lang="en">Kozlova O.A., Nelayev V.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://inf.grid.by/jour/article/view/87">https://inf.grid.by/jour/article/view/87</self-uri><abstract><p>Посредством ab initio, из первых принципов, моделирования исследуются электронные свой-ства трехмерной и двухмерной структур молибденита, MoS2, сформированных вдоль &lt;001&gt;, &lt;010&gt; и &lt;100&gt; кристаллографических направлений. Проводятся расчеты электронной плотности и зонной структуры. Показывается, что зонные структуры 2D-&lt;010&gt; и -&lt;100&gt; MoS2 идентичны. Зонная структура 2D-&lt;001&gt; MoS2 отличается наличием прямозонного перехода и отсутствием дополни-тельных энергетических уровней. Обнаруженные особенности подтверждают возможность нали-чия в MoS2, как и у графена, исключительных электронных и магнитных свойств.</p></abstract><trans-abstract xml:lang="en"><p>The electronic properties of the three- and two-dimensional structures of molybdenum disulfide, formed along &lt;001&gt;, &lt;010&gt;and&lt;100&gt; crystallographic directions, are studied by means of ab initio, from first principles, modeling methods. Electron density and zone structure calculations are performed. It is shown that the zone diagrams of 2D-&lt;010&gt; and -&lt;100&gt; MoS2 are identical. The zone structure of 2D-&lt;001&gt; MoS2 distinguishes by the direct band gap transition and the absence of the additional energetic levels. The detected peculiarities confirm the possibility that MoS2, as well as graphene, possess unique electronic and magnetic properties.</p></trans-abstract></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Kresse, G. From ultrasoft pseudopotentials to the projector augmented-wave method /G. Kresse, D. Joubert // Physical Review. B. – 1999. – Vol. 54. – P. 1758–1775.</mixed-citation><mixed-citation xml:lang="en">Kresse, G. From ultrasoft pseudopotentials to the projector augmented-wave method /G. Kresse, D. Joubert // Physical Review. B. – 1999. – Vol. 54. – P. 1758–1775.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Kresse, G. 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